UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
VCSEL

¢Ã Features

¡Ü 5¨ª Epoxy molded with round emission surface
   (3¨ª is also available)
¡Ü Good heat dissipation
¡Ü Low dependence of power output over
   temperature
¡Ü Driving current between 8 to 15§Ì
¡Ü Nominal 10¢ª emission angle
¡Ü Ideal for high resolution detection
¢Ã Applications

¡Ü Position sensing
¡Ü Smoke detecting




¢Ã Electro-Optical Characteristics at 25¡É
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
   Threshold Current
Ith
3 6 §Ì
   Output Power *2
PO 2.0 §Ñ IF=12§Ì
   Operating Current
IOP 12 §Ì
   Slope Efficiency *3
0.35 §Ñ /§Ì
IF=12§Ì
   Wavelength P 840 850 860 §¬ IF=12§Ì
   Forward Voltage
VF

1.8

2 2.1 V IF=12§Ì
   Breakdown Voltage
VBD 10 15 V IF=10§Ë
   Series Resistance
RS
35 0.85 §Ù IR=12§Ì
   Beam Divergence Angle *4
  10 2.0 Deg
 
      *1 - All parameters except mentioned are measured at at IF=12§Ì, 25¡É.
       *2 - Higher power can be provided under request.
       *3 - Slope efficiency is defined as ¥ÄP/(12-Ith ) at 25¡É.
       *4 - Beam divergence is defined as the angle of light intensity at Full Width at Half Maximum(FWHM).


¢Ã Absolute Maximum Ratings

PARAMETERS MIN
TYP
MAX UNIT
   Storage Temperature
-40 120 ¡É
   Operating Temperature -20 80 ¡É
   Lead Solder Temperature
260 ¡É
   Continuous Forward Current 30 §Ì
   Continuous Reverse Voltage
10 V



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