UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
INFRARED EMITTING DIODE INTRODUCTION

These are often used as light sources for optical sensors in invisible infrared LEDs. They provide large emitted light output. The emitted light wavelength is generally 940 nm in the case of GaAs, 880 nm in the case of GaAlAs, and 830 nm in the case of GaAlAs. GaAlAs is a fast response type and it is optimum for use in communications. Packages include the can type and the resin mold type

Model Name Reverse Voltage (V) Forward Current (§Ì) Power Dissipation (§Ñ) Forward Voltage (V) Radiant Intensity(§Ñsr) Peak Emission Wavelength (§¬) Half Angle( ¢ª) Operating Temp. (¡É)
FLE-1ML3 20 50 120 1.8 typ. 1.3 typ. 660 ¡¾30 -25~+100
HLE-1ML2 / 1ML3 5
5
100
100
120
120
1.8 typ.
1.8 typ.
5.4 typ.
5.4 typ.
830
830
¡¾36
¡¾30
-25~+100
-25~+100
JLE-1ML2 5 100 170 1.2 typ. 2.7 typ. 940 ¡¾32 -25~+100
JLE-1KL3 /1KL5 5
5
100
100
170
170
1.35 typ.
1.35 typ.
15 typ.
10 typ.
940
940
¡¾8
¡¾5
-30~+100
-30~+100


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