UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
PHOTOTRANSISTOR & PHOTODARLINGTON



The APD-1MLA and 1MLB are high-output NPN silicon photodarlingtons mounted in a TO-18 type header with clear epoxy encapsulation. The photodarlingtons have a wide angular response and are relatively low-cost as compared to TO-18 metal can type devices.


¢Ã Features ¢Ã Applications
¡Ü Wide angular response
¡Ü Relatively low-cost against metal can package
¡Ü Low profile package
¡Ü APD-1MLA : Two leads (Collector, Emitter)
   APD-1MLB : Three leads (Collector, Emitter, Base)
¡Ü Optical counters
¡Ü Optical detectors
¡Ü Infrared sensors

¢Ã ÃÖ´ëÁ¤°Ý MAXIMUM RATINGS (Ta=25¡É)
Item Symbol Rating Unit
 Ä÷ºÅÍ-¿¡¹ÌÅÍ°£ Àü¾Ð
 Collector-Emitter Voltage
VCEO 25 V
 ¿¡¹ÌÅÍ-Ä÷ºÅÍ°£ Àü¾Ð
 Emitter-Collector Voltage
VECO 4 V
 Ä÷ºÅÍÀü·ù
 Collector Current
IC 100 §Ì
 Ä÷ºÅͼսÇ
 Collector Power Dissipation
PC 100 §Ñ
 µ¿Àۿµµ
 Operating temperature
Topr. -25 ¡­ +90 ¡É
 º¸Á¸¿Âµµ
 Storage temperature
Tstg. -25 ¡­ +95> ¡É
 ³³¶«¿Âµµ
 Soldering temperature *1
Tsol. 260 ¡É
*1 ¸®µå¼± ½ÃÀÛÁöÁ¡¿¡¼­ 2§® ¶³¾îÁø °÷¿¡¼­ t=5sec.
For max. 5 seconds at the position of 2mm from the resin edge


¢Ã ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É)
Item Symbol Conditions Min. Typ. Max. Unit
 ¾ÏÀü·ù
  Collector Dark Current
ICEO VCEO=10V 1.0 §Ê
 ±¤Àü·ù
  Light Current
IL VCE=5V,200Lux*2 5 §Ì
 C-E Æ÷È­Àü¾Ð
  C-E Saturation Voltage
VCE(sat) IC=1§Ì, 2,000Lux *2 1.4 V
 ÀÀ´ä½Ã°£
 Switching Speeds
Rise ime tr VCC=10V, IC=5§Ì
RL=100§Ù
65 §Á
 Fall Time tf 75 §Á
 ºÐ±¤°¨µµ
  Spectral Sensitivity
¥ë 48~1.000 §¬
 ÇÇÅ©°¨µµÆÄÀå
  Peak Wavelength
¥ëp 800 §¬
 ¹ÝÄ¡°¢
  Half Angle
¥Ä¥è ¡¾70 deg.
*2 »ö¿Âµµ=2856K Ç¥ÁØÅÖ½ºÅÙÀü±¸
Color temp.=2856K standard Tungsten lamp


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