UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
PHOTOTRANSISTOR & PHOTODARLINGTON


  The ADT-1MLAR2 and 1MLBR2 are high-sensitivity NPN silicon phototransistors mounted in TO-18 type header with black epoxy encapsulation. With daylight filter the hototransistor is sensitive only infrared rays.


¢Ã Features ¢Ã Applications
 ¡Ü Narrow angular response
 ¡Ü Durable
 ¡Ü High reliability in demanding
    environments
 ¡Ü Optical counters
 ¡Ü Optical detectors
 ¡Ü Infrared sensors

¢Ã MAXIMUM RATINGS (Ta=25¡É)
Item Symbol Rating Unit
Ä÷ºÅÍ-¿¡¹ÌÅÍ°£ Àü¾Ð Collector-Emitter Voltage VCEO 30 V
¿¡¹ÌÅÍ-Ä÷ºÅÍ°£ Àü¾Ð Emitter-Collector Voltage VCEO 4 V
Äà ·º ÅÍ Àü ·ù Collector Current IC 100 §Ì
Äà ·º ÅÍ ¼Õ ½Ç Collector Power Dissipation PC 150 §Ñ
µ¿ ÀÛ ¿Â µµ Operating temperature Topr. -30¡­+100 ¡É
º¸ Á¸ ¿Â µµ Storage temperature Tstg. -35¡­+125 ¡É
³³ ¶« ¿Â µµ Soldering temperature *1 Tsol. 260 ¡É
*1 ¸®µå¼± ½ÃÀÛÁöÁ¡¿¡¼­ 2§® ¶³¾îÁø °÷¿¡¼­ t=5sec.
For max. 5 seconds at the position of 2mm from the resin edge


¢Ã ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É)
Item Symbol Conditions Min. Typ. Max. Unit
 ¾Ï Àü ·ù
 Collector Dark Current
ICEO VCEO=10V     1.0 §Ë
 ±¤ Àü ·ù
 Light Current
IL VCE=5V,200Lux*2 5     §Ì
 C-E Æ÷È­Àü¾Ð
 C-E Saturation Voltage
VCE(sat) IC=1§Ì, 2,000Lux*2     1.4 V
 ÀÀ´ä½Ã°£
 Switching Speeds
Rise Time tr VCC=10V, IC=5§Ì
RL=100§Ù
  65   §Á
Fall Time tf   75   §Á
 ºÐ±¤°¨µµ
 Spectral Sensitivity
¥ë   480¡­1,000 §¬
 ÇÇÅ©°¨µµÆÄÀå
 Peak Wavelength
¥ëp     800   §¬
 ¹Ý Ä¡ °¢
 Half Angle
¥Ä¥è     ¡¾15   deg.
*2 »ö¿Âµµ=2856K Ç¥ÁØÅÖ½ºÅÙÀü±¸
Color temp.=2856K standard Tungsten lamp


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