|
PHOTOTRANSISTOR & PHOTODARLINGTON
|
|
|
The ADT-1MLAR2 and 1MLBR2 are high-sensitivity NPN silicon phototransistors mounted in TO-18 type header with black epoxy encapsulation. With daylight filter the hototransistor is sensitive only infrared rays.
|
¢Ã Features |
¢Ã Applications |
¡Ü Narrow angular response
¡Ü Durable
¡Ü High reliability in demanding
environments
|
¡Ü Optical counters
¡Ü Optical detectors
¡Ü Infrared sensors
|
¢Ã MAXIMUM RATINGS (Ta=25¡É) |
Item |
Symbol |
Rating |
Unit |
Ä÷ºÅÍ-¿¡¹ÌÅÍ°£ Àü¾Ð Collector-Emitter Voltage |
VCEO |
30 |
V |
¿¡¹ÌÅÍ-Ä÷ºÅÍ°£ Àü¾Ð Emitter-Collector Voltage |
VCEO |
4 |
V |
ÄÃ ·º ÅÍ Àü ·ù Collector Current |
IC |
100 |
§Ì |
Äà ·º ÅÍ ¼Õ ½Ç Collector Power Dissipation |
PC |
150 |
§Ñ |
µ¿ ÀÛ ¿Â µµ Operating temperature |
Topr. |
-30¡+100 |
¡É |
º¸ Á¸ ¿Â µµ Storage temperature |
Tstg. |
-35¡+125 |
¡É |
³³ ¶« ¿Â µµ Soldering temperature *1 |
Tsol. |
260 |
¡É |
*1 ¸®µå¼± ½ÃÀÛÁöÁ¡¿¡¼ 2§® ¶³¾îÁø °÷¿¡¼ t=5sec.
For max. 5 seconds at the position of 2mm from the resin edge
|
¢Ã ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É) |
Item |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
¾Ï Àü ·ù Collector Dark Current |
ICEO |
VCEO=10V |
|
|
1.0 |
§Ë |
±¤ Àü ·ù Light Current |
IL |
VCE=5V,200Lux*2 |
5 |
|
|
§Ì |
C-E Æ÷ÈÀü¾Ð C-E Saturation Voltage |
VCE(sat) |
IC=1§Ì, 2,000Lux*2 |
|
|
1.4 |
V |
ÀÀ´ä½Ã°£ Switching Speeds |
Rise Time |
tr |
VCC=10V, IC=5§Ì RL=100§Ù
|
|
65 |
|
§Á |
Fall Time |
tf |
|
75 |
|
§Á |
ºÐ±¤°¨µµ Spectral Sensitivity |
¥ë |
|
480¡1,000 |
§¬ |
ÇÇÅ©°¨µµÆÄÀå Peak Wavelength |
¥ëp |
|
|
800 |
|
§¬ |
¹Ý Ä¡ °¢ Half Angle |
¥Ä¥è |
|
|
¡¾15 |
|
deg. |
*2 »ö¿Âµµ=2856K Ç¥ÁØÅÖ½ºÅÙÀü±¸ Color temp.=2856K standard Tungsten lamp |
|
|