UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
PHOTOTRANSISTOR & PHOTODARLINGTON


   The ADT-1MLAR2 and 1MLBR2 are high-sensitivity NPN silicon phototransistors mounted in TO-18 type header with black epoxy encapsulation. With daylight filter the hototransistor is sensitive only infrared rays.

¢Ã Features ¢Ã Applications
 - Wide angular response
 - Relatively low-cost against metal can package
 - Low profile package
 - With daylight filter
 - Remote control sensors
 - Card readers
 - Optical switches

¢Ã MAXIMUM RATINGS (Ta=25¡É)
Item Symbol Rating Unit
Collector-Emitter Voltage VCEO 40 V
Emitter-Collector Voltage VECO 4 V
Collector Current IC 30 §Ì
Collector Power Dissipation PC 100 §Ñ
Operating temperature Topr. -25 ¡­ +90 ¡É
Storage temperature Tstg. -30 ¡­ +100 ¡É
Soldering temperature *1 Tsol. 260 ¡É
*1 For max. 5 seconds at the position of 2mm from the resin edge


¢Ã ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É)
Item Symbol Conditions Min. Typ. Max. Unit
Collector Dark Current ICEO VCEO=10V 1 200 §Ê
Light Current IL VCE=10V,200Lux*2 0.5 1.2 5.0 §Ì
C-E Saturation Voltage VCE(sat) IC=2§Ì, 2,000Lux*2 0.2 0.4 V
Switching Speeds Rise ime tr VCC=10V, IC=5§Ì
RL=100§Ù
8 §Á
Fall Time tf 10 §Á
Spectral Sensitivity ¥ë 720~1.050 §¬
Peak Wavelength ¥ëp 940 §¬
Half Angle ¥Ä¥è ¡¾70 deg.
*2 Color temp.=2856K standard Tungsten lamp


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