|
PHOTOTRANSISTOR & PHOTODARLINGTON
|
|
|
The ADT-1MLA and 1MLB are high-sensitivity NPN silicon phototransistors mounted in TO-18 type header with clear epoxy
encapsulation. The phototransistors have a wide angular response and relatively low-cost compared to TO-18 can type devices.
|
¢Ã Features |
¢Ã Applications |
¡Ü Wide angular response
¡Ü Relatively low-cost against metal
can package
¡Ü Low profile package
¡Ü ADT-1MLA : Two leads (Collector, Emitter)
ADT-1MLB : Three leads (Collector, Emitter, Base)
|
¡Ü Infrared sensors
¡Ü Optical switches
¡Ü Camera stroboscopes
|
¢Ã ÃÖ´ëÁ¤°Ý MAXIMUM RATINGS (Ta=25¡É) |
Item |
Symbol |
Rating |
Unit |
Ä÷ºÅÍ-¿¡¹ÌÅÍ°£ Àü¾Ð Collector-Emitter Voltage |
VCEO |
40 |
V |
¿¡¹ÌÅÍ-Ä÷ºÅÍ°£ Àü¾Ð Emitter-Collector |
VCEO |
40 |
V |
Ä÷ºÅÍÀü·ù Collector Current IC |
VECO |
30 |
mA |
Ä÷ºÅÍ¼Õ½Ç Collector Power Dissipation |
PC |
100 |
§Ñ |
µ¿Àۿµµ Operating temperature |
Topr. |
-25 ¡ +90 |
¡É |
º¸Á¸¿Âµµ Storage temperature Tstg. |
VCEO |
-30 ¡ +100 |
¡É |
³³¶«¿Âµµ Soldering temperature *1 |
Tsol. |
260 |
¡É |
*1 ¸®µå¼± ½ÃÀÛÁöÁ¡¿¡¼ 2§® ¶³¾îÁø °÷¿¡¼ t=5sec.
For max. 5 seconds at the position of 2mm from the resin edge
|
¢Ã Àü±â±¤ÇÐÀûƯ¼º ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É) |
Item |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
Collector Dark Current |
ICEO |
VCEO=10V |
|
1 |
200 |
§Ê |
Light Current |
IL |
VCE=10V,200Lux *2 |
1.5 |
5.0 |
15 |
§Ì |
C-E Saturation Voltage |
VCE(sat) |
IC=5§Ì, 2,000Lux *2 |
|
0.2 |
0.4 |
V |
Switching Speeds |
Riseime |
tr |
VCC=10V,IC=5§Ì RL=100§Ù |
|
3.2 |
|
§Á |
Fall Time |
tf |
|
4.8 |
|
§Á |
Spectral Sensitivity |
¥ë |
|
500~1.050 |
§¬ |
Peak Wavelength |
¥ëp |
|
|
880 |
|
§¬ |
Half Angle |
¥Ä¥è |
|
|
¡¾6 |
|
deg. |
*2 »ö¿Âµµ=2856K Ç¥ÁØÅÖ½ºÅÙÀü±¸ Color temp.=2856K standard Tungsten lamp
|
|
|