UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
PHOTOTRANSISTOR & PHOTODARLINGTON



     The ADT-1MLA and 1MLB are high-sensitivity NPN silicon phototransistors mounted in TO-18 type header with clear epoxy encapsulation. The phototransistors have a wide angular response and relatively low-cost compared to TO-18 can type devices.


¢Ã Features ¢Ã Applications
¡Ü Wide angular response
¡Ü Relatively low-cost against metal
   can package
¡Ü Low profile package
¡Ü ADT-1MLA : Two leads (Collector, Emitter)
   ADT-1MLB : Three leads (Collector, Emitter, Base)
¡Ü Infrared sensors
¡Ü Optical switches
¡Ü Camera stroboscopes


¢Ã ÃÖ´ëÁ¤°Ý MAXIMUM RATINGS (Ta=25¡É)
Item Symbol Rating Unit
Ä÷ºÅÍ-¿¡¹ÌÅÍ°£ Àü¾Ð Collector-Emitter Voltage VCEO 40 V
¿¡¹ÌÅÍ-Ä÷ºÅÍ°£ Àü¾Ð Emitter-Collector VCEO 40 V
Ä÷ºÅÍÀü·ù Collector Current IC VECO 30 mA
Ä÷ºÅÍ¼Õ½Ç Collector Power Dissipation PC 100 §Ñ
µ¿Àۿµµ Operating temperature Topr. -25 ¡­ +90 ¡É
º¸Á¸¿Âµµ Storage temperature Tstg. VCEO -30 ¡­ +100 ¡É
³³¶«¿Âµµ Soldering temperature *1 Tsol. 260 ¡É
*1 ¸®µå¼± ½ÃÀÛÁöÁ¡¿¡¼­ 2§® ¶³¾îÁø °÷¿¡¼­ t=5sec.
For max. 5 seconds at the position of 2mm from the resin edge


¢Ã Àü±â±¤ÇÐÀûƯ¼º ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É)
Item Symbol Conditions Min. Typ. Max. Unit
Collector Dark Current ICEO VCEO=10V 1 200 §Ê
Light Current IL VCE=10V,200Lux *2 1.5 5.0 15 §Ì
C-E Saturation Voltage VCE(sat) IC=5§Ì, 2,000Lux *2   0.2 0.4 V
Switching Speeds Riseime tr VCC=10V,IC=5§Ì
RL=100§Ù
  3.2   §Á
Fall Time tf 4.8 §Á
Spectral Sensitivity ¥ë 500~1.050 §¬
Peak Wavelength ¥ëp     880   §¬
Half Angle ¥Ä¥è     ¡¾6   deg.
*2 »ö¿Âµµ=2856K Ç¥ÁØÅÖ½ºÅÙÀü±¸
Color temp.=2856K standard Tungsten lamp


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