UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
PHOTOTRANSISTOR & PHOTODARLINGTON








   The ADT-1KA and 1KB are high-sensitivity NPN silicon phototransistors mounted in durable, hermetically sealed TO-18 metal can which provide years of reliable performance, even under demanding conditions such as use outdoors.




¢Ã Features ¢Ã Applications
 - Wide angular response
 - Durable
 - High reliability in demanding environments
 - ADT-1KA : Two leads (Collector, Emitter)
 - ADT-1KB : Three leads (Collector, Emitter, Base)
 - Optical counters
 - Infrared sensors
 - Optical detectors
 - Fiber optic communications

¢Ã MAXIMUM RATINGS (Ta=25¡É)

Item Symbol Rating Unit
Collector-Emitter Voltage VCEO 40 V
Emitter-Collector Voltage VECO 4 V
Collector Current IC 50 §Ì
Collector Power Dissipation PC 150 §Ñ
Operating temperature Topr. -30 ¡­ +100 ¡É
Storage temperature Tstg. -50 ¡­ +150 ¡É
Soldering temperature *1 Tsol. 260 ¡É
*1 For max. 5 seconds at the position of 2mm from the resin edge

¢Ã ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É)

Item Symbol Conditions Min. Typ. Max. Unit
Collector Dark Current ICEO VCEO=10V 1 200 §Ê
Light Current IL VCE=10V,200Lux*2 0.5 2.0 5.0 §Ì
C-E Saturation Voltage VCE(sat) IC=2§Ì, 2,000Lux *2 0.2 0.4 V
Switching Speeds Rise ime tr VCC=10V, IC=5§Ì
RL=100§Ù
8 §Á
Fall Time tf 10 §Á
Spectral Sensitivity ¥ë 500~1.050 §¬
Peak Wavelength ¥ëp 880 §¬
Half Angle ¥Ä¥è ¡¾50 deg.
*2 Color temp.=2856K standard Tungsten lamp


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