UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
PHOTODIODES



   The ADP-1KL, a silicon photodiode mount-ed in durable, hermetically sealed TO-18 metal can package, provides years of relia-ble performance even under demanding conditions such as use outdoors.


¢Ã Features ¢Ã Applications
¡Ü Durable
¡Ü Narrow angular response
¡Ü High reliability in demanding
   environments
¡Ü Optical detectors
¡Ü Infrared sensors
¡Ü Optical switches
¡Ü Encoders
¡Ü Car electronics
¡Ü Smoke detectors

¢Ã ÃÖ´ëÁ¤°Ý MAXIMUM RATINGS (Ta=25¡É)

Item Symbol Rating Unit
   Reverse voltage VR 20 V
  Operating temperature Topr. -25 ¡­ +120 ¡É
  Storage temperature Tstg. -50 ¡­ +150 ¡É
  Soldering temperature *1 Tsol. 260 ¡É

*1 ¸®µå¼± ½ÃÀÛÁöÁ¡¿¡¼­ 2§® ¶³¾îÁø °÷¿¡¼­ t=5sec.
For max. 5 seconds at the position of 2mm from the resin edge


¢ÃÀü±â±¤ÇÐÀûƯ¼º ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É)

Item Symbol Conditions Min. Typ. Max. Unit
   Open Circuit Voltage VOC EV=1,000Lux *2 0.4 V
   Short Circuit Current ISC 18 35 §Ë
   Dark Current Id VR=5V 0.1 §Ë
   Curve Factor C.F. 0.55 -
   Capacitance Ct V=0V, f=1§Ö 50 §Ü
   Temp. Coefficient of VOC ¥át -2.2 §Æ/¡É
   Temp. Coefficient of ISC ¥ât 0.18 %/¡É
   Spectral Sensitivity ¥ë 450¡­1,050 §¬
   Peak Wavelength ¥ëp 900 §¬
   Half Angle ¥Ä¥è ¡¾15 deg.

*2 »ö¿Âµµ=2856K Ç¥ÁØÅÖ½ºÅÙÀü±¸
Color temp.=2856K standard Tungsten lamp


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