UV Sensor
  Photodiodes
  PIN Photodiodes
  Phototransistor &
Photodarlington
  Infrared Emitting Diode
  Vcsel
INFRARED EMITTING DIODE

   The JLE-1ML2, a high-power GaAs IRED mounted in a TO-18 type header with clear
   epoxy encapsulation, has wide beam angular and is relatively low-cost compared to
   TO-18 can type devices.



¢Ã Features ¢Ã Applications
¡Ü Wide beam angle
¡Ü Relatively low cost against metal
   can package
¡Ü Low profile package
¡Ü Optical switches
¡Ü Encoders
¡Ü Optical readers

¢Ã ÃÖ´ëÁ¤°Ý MAXIMUM RATINGS (Ta=25¡É)
Item Symbol Rating Unit
Reverse voltage VR 5 V
Forward current IF 100 mA
Pulse forward current *1 IFP 1 A
Power dissipation PD 170 §Ñ
Operating temperature Topr. -25 ¡­ +100 ¡É
Storage temperature Tstg. -25 ¡­ +100 ¡É
Soldering temperature *2 Tsol. 260 ¡É
*1 tw = 100§Á, T = 10§Â
*2 For max. 5 seconds at the position of 2mm from the resin edge


¢Ã ELECTRO-OPTICAL CHARACTERISTICS at 25¡É
Item Symbol Conditions Min. Typ. Max. Unit
Forward Voltage VF IF = 50§Ì 1.2 1.5 V
Reverse Current IR VR=5V 10 §Ë
Capacitance Ct F = 1§Ö 25 §Ü
Radiant Intensity PO IF = 50§Ì 2.7 §Ñ/sr
Peak Emission Wavelength ¥ëp IF = 50§Ì 940 §¬
Spectral Bandwidth 50% ¥Ä¥ë IF = 50§Ì 50 §¬
Half Angle ¥Ä¥è ¡¾32 deg.
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